 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| hexfet ? power mosfet 10/08/04 parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 18 i d @ t c = 100c continuous drain current, v gs @ 10v 13 a i dm pulsed drain current 72 p d @t c = 25c power dissipation 150 w linear derating factor 1.0 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 247 mj i ar avalanche current 18 a e ar repetitive avalanche energy 15 mj dv/dt peak diode recovery dv/dt 8.1 v/ns t j operating junction and -55 to +175 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c mounting torque, 6-32 or m3 srew 10 lbfin (1.1nm) absolute maximum ratings description v dss = 200v r ds(on) = 0.15 ? i d = 18a s d g advanced process technology dynamic dv/dt rating 175c operating temperature fast switching fully avalanche rated ease of paralleling simple drive requirements d 2 pak IRF640Ns to-220ab IRF640N to-262 IRF640Nl IRF640N IRF640Ns IRF640Nl fifth generation hexfet ? power mosfets from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. the to-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. the low thermal resistance and low package cost of the to-220 contribute to its wide acceptance throughout the industry. the d 2 pak is a surface mount power package capable of accommodating die sizes up to hex-4. it provides the highest power capability and the lowest possible on- resistance in any existing surface mount package. the d 2 pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0w in a typical surface mount application. the through-hole version (IRF640Nl) is available for low- profile application. www.irf.com 1 pd - 94006a
www.irf.com 2 IRF640N/s/l s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) ??? ??? showing the i sm pulsed source current integral reverse (body diode) ??? ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.3 v t j = 25c, i s = 11a, v gs = 0v t rr reverse recovery time ??? 167 251 ns t j = 25c, i f = 11a q rr reverse recovery charge ??? 929 1394 nc di/dt = 100a/s t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) source-drain ratings and characteristics 18 72 parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 200 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.25 ??? v/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance ??? ??? 0.15 ? v gs = 10v, i d = 11a v gs(th) gate threshold voltage 2.0 ??? 4.0 v v ds = v gs , i d = 250a g fs forward transconductance 6.8 ??? ??? s v ds = 50v, i d = 11a ??? ??? 25 a v ds = 200v, v gs = 0v ??? ??? 250 v ds = 160v, v gs = 0v, t j = 150c gate-to-source forward leakage ??? ??? 100 v gs = 20v gate-to-source reverse leakage ??? ??? -100 na v gs = -20v q g total gate charge ??? ??? 67 i d = 11a q gs gate-to-source charge ??? ??? 11 nc v ds = 160v q gd gate-to-drain ("miller") charge ??? ??? 33 v gs = 10v, see fig. 6 and 13 t d(on) turn-on delay time ??? 10 ??? v dd = 100v t r rise time ??? 19 ??? i d = 11a t d(off) turn-off delay time ??? 23 ??? r g = 2.5 ? t f fall time ??? 5.5 ??? r d = 9.0 ? , see fig. 10 between lead, ??? ??? 6mm (0.25in.) from package and center of die contact c iss input capacitance ??? 1160 ??? v gs = 0v c oss output capacitance ??? 185 ??? v ds = 25v c rss reverse transfer capacitance ??? 53 ??? pf ? = 1.0mhz, see fig. 5 nh electrical characteristics @ t j = 25c (unless otherwise specified) l d internal drain inductance l s internal source inductance ??? ??? s d g i gss ns i dss drain-to-source leakage current thermal resistance parameter typ. max. units r jc junction-to-case ??? 1.0 r cs case-to-sink, flat, greased surface 0.50 ??? c/w r ja junction-to-ambient ??? 62 r ja junction-to-ambient (pcb mount) ??? 40 IRF640N/s/l www.irf.com 3 0.01 0.1 1 10 100 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 0.1 1 10 100 0.1 1 10 100 20s pulse width t = 175 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 0.1 1 10 100 4.0 5.0 6.0 7.0 8.0 9.0 10.0 v = 50v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 175 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 18a www.irf.com 4 IRF640N/s/l ! ! 0.1 1 10 100 1000 0.1 1 10 100 100 0 operation in this area limited by r ds(on) single pulse t t = 175 c = 25 c j c v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms "# $ ! ! 1 10 100 1000 v ds , drain-to-source voltage (v) 0 500 1000 1500 2000 2500 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 20 40 60 80 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs i = d 11a v = 40v ds v = 100v ds v = 160v ds 0.1 1 10 100 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 175 c j IRF640N/s/l www.irf.com 5 "# v ds 9 0% 1 0% v gs t d(on) t r t d(off) t f %& "# ' & ()* 1 0.1 % + - 25 50 75 100 125 150 175 0 4 8 12 16 20 t , case temperature ( c) i , drain current (a) c d "# v ds 9 0% 1 0% v gs t d(on) t r t d(off) t f %& "# ' & ()* 1 0.1 % 25 50 75 100 125 150 175 0 4 8 12 16 20 t , case temperature ( c) i , drain current (a) c d 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) www.irf.com 6 IRF640N/s/l q g q gs q gd v g charge d.u.t. v d s i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - +, ! -! %& .( &%& .( & t p v (br)dss i as "# $& ' r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 175 0 100 200 300 400 500 600 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 4.4a 7.6a 11a IRF640N/s/l www.irf.com 7 p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop r e-applied v oltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - for n-channel hexfet power mosfets / ? ? ! " ? # $ % && ? ' ($ $ ( ? ) * # $ ? +$ , ? ) - # $ ($ ! / www.irf.com 8 IRF640N/s/l le ad ass ignments 1 - gate 2 - drain 3 - source 4 - drain - b - 1.32 (.052) 1.22 (.048) 3x 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 4.69 (.185) 4.20 (.165) 3x 0.93 (.037) 0.69 (.027) 4.06 (.160) 3.55 (.140) 1.15 (.045) min 6.47 (.255) 6.10 (.240) 3.78 (.149) 3.54 (.139) - a - 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 15.24 (.600) 14.84 (.584) 14.09 (.555) 13.47 (.530) 3x 1.40 (.055) 1.15 (.045) 2.54 (.100) 2x 0.36 (.014) m b a m 4 1 2 3 notes: 1 dimensioning & tolerancing per ansi y14.5m, 1982. 3 outline conforms to jedec outline to-220ab. 2 controlling dimension : inch 4 heatsink & lead measurements do n ot include burrs. hexfet 1- gate 2- drain 3- source 4- drain lead assignments igbts, copac k 1- gate 2- collector 3- emitter 4- collector dimensions are shown in millimeters (inches) example: in the assembly line "c" t his is an irf1010 lot code 1789 as s emb led on ww 19, 1997 part numbe r as s e mb l y lot code dat e code ye ar 7 = 1997 line c we e k 19 logo re ct if ie r int e rnat ional note: "p" in assembly line position indicates "lead-free" IRF640N/s/l www.irf.com 9 dimensions are shown in millimeters (inches) note: "p" in ass embly line pos i ti on i ndi cates " l ead- f r ee" f530s this is an irf 530s with lot code 8024 as s e mb le d on ww 02, 2000 in the assembly line "l" assembly lot code inte rnational rect ifier logo part numbe r dat e code ye ar 0 = 2000 week 02 line l f530s a = as s e mb l y s i t e code we e k 02 p = de s i gnat e s l e ad- f r e e product (opt ional) rectifier int ernational logo lot code as s e mb l y ye ar 0 = 2000 dat e code part number www.irf.com 10 IRF640N/s/l to-262 part marking information to-262 package outline dimensions are shown in millimeters (inches) as s e mb l y lot code rect if ier int ernat ional as s e mble d on ww 19, 1997 note: "p" in assembly line pos ition indicates "l ead-f ree" in the assembly line "c" logo t his is an irl3103l lot code 1789 example: line c dat e code we e k 19 year 7 = 1997 part number part number logo lot code as s e mb l y int ernat ional rect if ier product (opt ional) p = de s i gnat e s l e ad-f r e e a = as s e mb l y s i t e code we e k 19 year 7 = 1997 dat e code or IRF640N/s/l www.irf.com 11 this is only applied to to-220ab package data and specifications subject to change without notice. this product has been designed and qualified for the automotive [q101] (IRF640N) & industrial market (IRF640Ns/l). qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 10/04 i sd 11a . di/d 344a/s, v dd v (br)dss , t j 175c repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 4.2mh r g = 25 ? , i as = 11a. pulse width 400s; duty cycle 2%. this is applied to d 2 pak, when mounted on 1" square pcb ( fr-4 or g-10 material ). for recommended footprint and soldering techniques refer to application note #an-994. dimensions are shown in millimeters (inches) 3 4 4 trr f eed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl f eed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957 ) 23.90 (.941 ) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362 ) min. 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge. note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/ |
Price & Availability of IRF640N
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |